Toshiba has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.
Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance.
In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications.
Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.
Applications:
- Power supplies for industrial equipment
- Motor control equipment
Features include:
Industry’s lowest-in-class On-resistanc
RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
Low output charge and low gate switch charge
Allows 4.5V logic level drive